Classification of magnetic encoders
Edit： Click： Times Date：2025-4-2
Magnetic encoders are currently mainly divided into four categories.
Hall effect：
The earliest magneto electric effect technology measured magnetic field strength by measuring the transverse electric field (Hall voltage) generated in semiconductor materials under an external magnetic field, with low accuracy and significant environmental impact. It was not widely used in the field of encoders.
Anisotropic Magnetoresistance：
AMR second-generation magneto electric induction technology utilizes the spin charge coupling effect in magnetic materials. When the direction of the magnetic field changes, the resistance value will correspondingly change. Low accuracy, moderate environmental impact, and relatively rare in current applications.
Giant Magnetoresistance：
The third generation magneto electric induction technology of GMR has the effect that the scattering of spin electrons in magnetic multilayer films changes with the change of external magnetic field, resulting in a change in resistance value. High precision, requiring a large magnetic field, generally less environmental impact, but sensitive to magnetic interference, mainstream technology in the market.
Tunneling Magnetoresistance：
The fourth generation magneto electric induction technology of TMR utilizes the quantum tunneling effect of spin polarized electrons in the tunnel junction between two magnetic layers to measure magnetic field changes. High precision, small magnetic field induction, minimal environmental impact, belonging to the latest generation of sensing technology, with a high design threshold.
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